Stacking of adjacent graphene layers grown on C-face SiC

Stacking of adjacent graphene layers grown on C-face SiC

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Effects of aluminum on epitaxial graphene grown on C-face SiC

Interface disorder probed at the atomic scale for graphene grown on the C face of SiC

Controllable growth of vertically aligned graphene on C-face SiC

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as...